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Electronic Devices

The Study of Voltage Shift in the Post-Radiation Response

Milic M. Pejovic, Momcilo M. Pejovic and Nikola T. NeÃ…Â¡ic
University of Nis Faculty of Electronic Engineering Aleksandra Medvedeva 14, 18000 Nis, Serbia

Abstract: The voltage shift in the gamma-irradiation and post irradiation response was studied with elevated temperature. The gate polarization of 0, 2.5 and 5V are used with gate oxide thickness. The relation between Ã¯Ââ€žVT and absorbed dose was observed. The Ã¯Ââ€žVT decrease while the zero-gate polarization during irradiation and 100 nm RADFETs Ã¯Ââ€žVT remains approximately during the annealing at room temperature. The decrease of Ã¯Ââ€žVT is associated with the continued annealing at 120oC. Thus, the fluctuations and various impact of the gate polarization is well addressed in this work.

Keywords: RADFET Sensor, Dosimeter, Gamma-ray Irradiation, Gate Oxide Thickness, Linear Dependence, Annealing, Zero Gate Polarization The Study of Voltage Shift in the Post-Radiation Response

DOI:https://doi.org/10.6025/ed/2023/12/1/15-21

Full_Text PDF 0.98 MB Download: 95 times

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