@article{3663,
  author = {Milic M. Pejovic, Momcilo M. Pejovic and Nikola T. Nešic},
  title = {The Study of Voltage Shift in the Post-Radiation Response},
  journal = {Electronic Devices},
  year = {2023},
  volume = {12},
  number = {1},
  doi = {https://doi.org/10.6025/ed/2023/12/1/15-21},
  url = {https://www.dline.info/ed/fulltext/v12n1/edv12n1_3.pdf},
  abstract = {The voltage shift in the gamma-irradiation and post irradiation response was studied with elevated temperature. The gate polarization of 0, 2.5 and 5V are used with gate oxide thickness. The relation between VT and absorbed dose was observed. The VT decrease while the zero-gate polarization during irradiation and 100 nm RADFETs VT remains approximately during the annealing at room temperature. The decrease of VT is associated with the continued annealing at 120oC. Thus, the fluctuations and various impact of the gate polarization is well addressed in this work.},
}