Electronic Devices Milic M. Pejovic, Momcilo M. Pejovic and Nikola T. Nešic 12 1 2023 https://doi.org/10.6025/ed/2023/12/1/15-21 https://www.dline.info/ed/fulltext/v12n1/edv12n1_3.pdf The voltage shift in the gamma-irradiation and post irradiation response was studied with elevated temperature. The gate polarization of 0, 2.5 and 5V are used with gate oxide thickness. The relation between VT and absorbed dose was observed. The VT decrease while the zero-gate polarization during irradiation and 100 nm RADFETs VT remains approximately during the annealing at room temperature. The decrease of VT is associated with the continued annealing at 120oC. Thus, the fluctuations and various impact of the gate polarization is well addressed in this work.