The Study of Voltage Shift in the Post-Radiation Response
Milic M. Pejovic, Momcilo M. Pejovic and Nikola T. NeÅ¡ic
Electronic Devices, Vol. 12, No. 1, 2023.
DOI: https://doi.org/10.6025/ed/2023/12/1/15-21
Link: https://www.dline.info/ed/fulltext/v12n1/edv12n1_3.pdf
Abstract:
The voltage shift in the gamma-irradiation and post irradiation response was studied with elevated temperature. The gate polarization of 0, 2.5 and 5V are used with gate oxide thickness. The relation between ï„VT and absorbed dose was observed. The ï„VT decrease while the zero-gate polarization during irradiation and 100 nm RADFETs ï„VT remains approximately during the annealing at room temperature. The decrease of ï„VT is associated with the continued annealing at 120oC. Thus, the fluctuations and various impact of the gate polarization is well addressed in this work.