References: [1] Dr. Lynn Fuller, The Short Channel MOSFET, Microelectronic Engineering Rochester Institute of Technology, https:// people.rit.edu/lffeee/mosfet_s.pdf [2] Milaim Zabeli, Nebi Caka, Myzafere Limani, Qamil Kabashi, the impact of MOSFETS physicAL al parameters on its threshold voltage, Proceedings of the 6th WSEAS Internationalonference on Microelectronics, Nanoelectronics, Optoelectronics, Istanbul, Turkey, May 27-29, 2007. [3] Thomas H. Lee Handout #2: EE214 Fall 2002A Review of MOS Device Physics; https://web.stanford.edu/ class/archive/ee/ ee214/ee214.1032/Handouts/HO2.pdf [4] Twesha Patel, Comparison of Level 1, 2 and 3 MOSFETS Course: Advanced Electronics,Semester: Fall 2014. [5] Prof. Wu,Lecture17 EE105Spring 2008,UC Berkeley, http:// inst.eecs.berkeley.edu/~ee105/p10/lectures/lecture17.pdf [6] Prof.J.S.Smith,MOS Transistor models:Body effects, SPICE models, Lecture15, EECS105 Spring 2004; https://inst.eecs. berkeley.edu/~ee105/sp04/handouts/lectures/Lecture15.pdf [7] SPICE MODEL PARAMETERS OF MOSFETS, https:// www.seas .upenn.edu / ~jan/spice/spice.MOSparamlist.html |