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Journal of Electronic Systems

Designing and Modelling of MOSFET Transistors

Stoycho Manev
Faculty of Telecommunications at Technical University of Sofia 8 Kl. Ohridski Blvd, Sofia 1000 Bulgaria

Abstract: We have studied the bulk effect in the MOSFET transistors. To do this work we have initially developed a design and model of the MOSFET transistors which helped us to plan. We have presented the trial results of the effect in N Channel MOSFET transistors.

Keywords: Bulk Effect, Body Effect, Back-gate Effect, MOSFET Transistors Designing and Modelling of MOSFET Transistors

DOI:https://doi.org/10.6025/jes/2022/12/3/69-76

Full_Text PDF 1.80 MB Download: 110 times

References:

[1] Prof. Wu , Lecture 17 EE105 Spring (2008). UC Berkeley www-t.eecs.berkeley.edu/~ee105/sp10/lectures/lecture17.pdf.
[2] Dr Lynn Fuller, S. Model Parameters for RIT MOSFET.
[3] Zabeli, Milaim, Caka, Nebi, Limani, M. & Kabashi, Q. (2007) the impact of MOSFET’s physical parameters on its threshold voltage. Proceedings of the 6th WSEAS International Conference on Microelectronics. Journal of Nanoelectronics and Optoelectronics, (Istanbul, Turkey).
[4] Prof. Smith, J.S. (2004) MOS Transistor models: Body effects, SPICE models, Lecture 15. https://inst.eecs.berkeley.edu/ ~ee105/sp04/handouts/lectures/Lecture15.pdf. EECS, p. 105.
[5] Patel, T. (2014). Comparison of Level 1, 2 and 3 MOSFET’s Course: Advanced Electronics,Semester.
[6] Lee Handout, T.H. Fall 2002A, review of MOS device physics-No. 2: EE214. https://web.stanford.edu/class/archive/ee/ ee214/ee214.1032/Handouts/HO2.pdf.
[7] Spice Model Parameters of MOSFETS, University of Pennsylvania Department of Electric Engineering https:// www.seas.upenn.edu/~jan/spice/spice.MOSparamlist.html.

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