@article{3535,
  author = {Stoycho Manev},
  title = {Designing and Modelling of MOSFET Transistors},
  journal = {Journal of Electronic Systems},
  year = {2022},
  volume = {12},
  number = {3},
  doi = {https://doi.org/10.6025/jes/2022/12/3/69-76},
  url = {https://www.dline.info/jes/fulltext/v12n3/jesv12n3_2.pdf},
  abstract = {We have studied the bulk effect in the MOSFET transistors. To do this work we have initially developed a design and model of the MOSFET transistors which helped us to plan. We have presented the trial results of the effect in N Channel MOSFET transistors.},
}