Designing and Modelling of MOSFET Transistors
Stoycho Manev
Journal of Electronic Systems, Vol. 12, No. 3, 2022.
DOI: https://doi.org/10.6025/jes/2022/12/3/69-76
Link: https://www.dline.info/jes/fulltext/v12n3/jesv12n3_2.pdf
Abstract:
We have studied the bulk effect in the MOSFET transistors. To do this work we have initially developed a design and model of the MOSFET transistors which helped us to plan. We have presented the trial results of the effect in N Channel MOSFET transistors.