@article{2237,
  author = {Xiaorong Zhao},
  title = {A High Gain and Low Noise UWB LNA for 3.1-10.6 GHz Wireless Application in 130 nm CMOS Technology },
  journal = {Progress in Signals and Telecommunication Engineering },
  year = {2017},
  volume = {6},
  number = {1},
  doi = {},
  url = {http://www.dline.info/pste/fulltext/v6n1/pstev6n1_1.pdf},
  abstract = {In this paper, a high gain and low noise 3.1-10.6 GHz ultra wideband (UWB) CMOS low noise amplifier (LNA)
with common gate (CG) topology was designed, which adopted a T-match input network of 50Ω matching in the required
band. The power reduction is achieved by the current reused technique. The proposed LNA was fabricated using TSMC 130
nm CMOS technology. The simulation results demonstrated a power gain of 21.603 dB with a ripple of ± 1.02 dB, achieved
noise figure less than 3.168 dB, an input return loss less than -15.576 dB and output return loss less than -20 dB. With a power
supply of 1.2V, the proposed circuit consumes 5.82 mW.},
}