Progress in Signals and Telecommunication Engineering Xiaorong Zhao 6 1 2017 http://www.dline.info/pste/fulltext/v6n1/pstev6n1_1.pdf In this paper, a high gain and low noise 3.1-10.6 GHz ultra wideband (UWB) CMOS low noise amplifier (LNA) with common gate (CG) topology was designed, which adopted a T-match input network of 50Ω matching in the required band. The power reduction is achieved by the current reused technique. The proposed LNA was fabricated using TSMC 130 nm CMOS technology. The simulation results demonstrated a power gain of 21.603 dB with a ripple of ± 1.02 dB, achieved noise figure less than 3.168 dB, an input return loss less than -15.576 dB and output return loss less than -20 dB. With a power supply of 1.2V, the proposed circuit consumes 5.82 mW.