Effect of Annealing On the Electrical Properties of Zn1- XCuxSe Thin Films Used For PV Applications
Muhammad Aftab Hayat, Muhammad Amjad, Waqas Anjum
Progress in Signals and Telecommunication Engineering , Vol. 5, No. 2, 2016.
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Abstract:
The thin films of Zn1- xCuxSe (x= 0.00, 0.05, 0.10, 0.15) were prepared on a glass substrate by using closed space sublimation (CSS) technique at room temperature. The effect of copper concentration on the electrical properties such as mobility, Carrier concentration, sheet resistance and conductivity of the thin films were investigated by Hall Effect measurement system. The carrier concentration and conductivity values of the ZnSe thin films are increased with the increase of Cu doping at certain level and then start decreasing. The sheet resistance and mobility decreases with the increase of copper concentration. It is evaluated that the electrical properties of the ZnSe thin films are controlled by copper doping. The contact analysis was also done. For contact analysis active silver passive silver and contactless measurements were used. The analysis shows the optimum values with active silver and minimum conductivity with passive silver. Moreover the deposited films were annealed at 100Â°C, 200Â°C, 300Â°C, 400Â°C and 500Â°C for mint in air. The effect of annealing on the mobility, Carrier concentration, sheet resistance and conductivity of the thin films were observed. The results show that the electrical properties of the ZnSe thin films are significantly improved with annealing.