A High Gain and Low Noise UWB LNA for 3.1-10.6 GHz Wireless Application in 130 nm CMOS Technology
Xiaorong Zhao, Honghui Fan, Hongjin Zhu, Zhongjun Fu, Haijun Huang
Signals and Telecommunication Journal, Vol. 5, No. 1, 2016.
DOI: 
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Abstract:
In this paper, a high gain and low noise 3.1-10.6 GHz ultra wideband (UWB) CMOS low noise amplifier (LNA)
with common gate (CG) topology was designed, which adopted a T-match input network of 50Â© matching in the required
band. The power reduction is achieved by the current reused technique. The proposed LNA was fabricated using TSMC 130 nm
CMOS technology. The simulation results demonstrated a power gain of 21.603 dB with a ripple of Â± 1.02 dB, achieved noise
figure less than 3.168 dB, an input return loss less than -15.576 dB and output return loss less than -20 dB. With a power supply
of 1.2V, the proposed circuit consumes 5.82 mW.