Abstract The changes in the piezoelectric layers caused by the use of a few chemicals are studied in this paper. The piezoelectric effect of the surface acoustic waves methods is extensively studied. The MEMS microgenerator is addressed which use the dynamic mode. The relation between the piezoelectric voltage and mechanical vibration frequency is also studied.... The changes in the piezoelectric layers caused by the use of a few chemicals are studied in this paper. The piezoelectric effect of the surface acoustic waves methods is extensively studied. The MEMS microgenerator is addressed which use the dynamic mode. The relation between the piezoelectric voltage and mechanical vibration frequency is also studied. Read More Read Less

Abstract We have given the outcome of the work on a design of a small forward converter. We have used lab measures, to build converter for generating a design. The steps we have used are enumerated and a correct recording of the procedures are carried out in the work with results. These steps can serve as a platform for future research.... We have given the outcome of the work on a design of a small forward converter. We have used lab measures, to build converter for generating a design. The steps we have used are enumerated and a correct recording of the procedures are carried out in the work with results. These steps can serve as a platform for future research. Read More Read Less

Abstract The voltage shift in the gamma-irradiation and post irradiation response was studied with elevated temperature. The gate polarization of 0, 2.5 and 5V are used with gate oxide thickness. The relation between VT and absorbed dose was observed. The VT decrease while the zero-gate polarization during irradiation and 100 nm RADFETs VT remains approximately during the annealing at room temperature.... The voltage shift in the gamma-irradiation and post irradiation response was studied with elevated temperature. The gate polarization of 0, 2.5 and 5V are used with gate oxide thickness. The relation between VT and absorbed dose was observed. The VT decrease while the zero-gate polarization during irradiation and 100 nm RADFETs VT remains approximately during the annealing at room temperature. The decrease of VT is associated with the continued annealing at 120oC. Thus, the fluctuations and various impact of the gate polarization is well addressed in this work. Read More Read Less